| CPC H01J 37/32449 (2013.01) [H01J 37/32183 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01J 2237/334 (2013.01)] | 8 Claims |

|
1. A plasma processing apparatus, comprising:
a processing chamber which is arranged inside a vacuum container, and in which plasma is formed;
a sample table that is arranged in the processing chamber and has an upper surface on which a wafer to be processed is placed;
a metal base member that is arranged on the sample table and incudes, therein, a refrigerant flow path through which a temperature-adjusted refrigerant flows;
at least one temperature sensor that is arranged between the refrigerant flow path and an upper surface of the base member and is configured to detect a temperature;
and a controller that is configured to detect a temperature of the base member or the wafer being processed, which is placed on the sample table, by using an output from the temperature sensor, wherein
the controller is configured to detect the temperature of the base member or the wafer based on one of a plurality of relations indicating linear functions obtained from results of measurements taken in advance of the processing of the wafer between a plurality of errors and a corresponding plurality of set temperatures of the refrigerant each defining a difference between a temperature obtained from the output of the temperature sensor and an actual temperature of the base member or the wafer as an error, and
the linear functions are different corresponding to regions of a plurality of continuous temperature ranges within an adjustable temperature range of the refrigerant, and the plurality of linear functions include the same coefficient and have a point where the error is 0.
|