US 12,224,016 B2
Transient and stable state read operations of a memory device
Ugo Russo, Boise, ID (US); Karan Banerjee, Singapore (SG); and Shyam Sunder Raghunathan, Singapore (SG)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 16, 2022, as Appl. No. 17/888,781.
Prior Publication US 2024/0062829 A1, Feb. 22, 2024
Int. Cl. G11C 16/26 (2006.01)
CPC G11C 16/26 (2013.01) 25 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving, at a memory system, a first read command associated with a first memory cell of a first set of memory cells, wherein the first set of memory cells comprises a first channel;
reading the first memory cell using a first type of read operation based on determining that the first channel comprises a first voltage condition, wherein the first type of read operation includes a delay associated with discharging at least a portion of a charge on the first channel over a first duration, and wherein the first voltage condition is based at least in part on a duration since a previous read operation performed on the first set of memory cells;
receiving a second read command associated with a second memory cell of a second set of memory cells, wherein the second set of memory cells comprises a second channel; and
reading the second memory cell using a second type of read operation based on determining that the second channel comprises a second voltage condition, wherein the second type of read operation refrains from including the delay.