| CPC G11C 11/4076 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G06F 13/1689 (2013.01); G11C 11/4074 (2013.01)] | 29 Claims |

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1. A memory device comprising:
a memory array;
a command address input circuit configured to receive a command address signal, the command address input circuit comprising a command address input receiver configured to capture an input command address signal that is based at least in part on a predefined receiver mask, wherein the receiver mask has a first timing parameter associated with a first voltage level and further has a second timing parameter associated with a second voltage level, wherein the second timing parameter is greater than the first timing parameter, wherein the predefined receiver mask has a hexagonal shape; and
an external clock terminal configured to receive a clock signal, wherein a center of the receiver mask is at a cross point of the clock signal.
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