US 12,223,993 B2
Content addressable memory based on selfrectifying ferroelectric tunnel junction element
Seong Ook Jung, Seoul (KR); and Se Hee Lim, Seoul (KR)
Assigned to INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Seoul (KR)
Filed by INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Seoul (KR)
Filed on Sep. 17, 2022, as Appl. No. 17/933,093.
Claims priority of application No. 10-2021-0124496 (KR), filed on Sep. 17, 2021.
Prior Publication US 2023/0086821 A1, Mar. 23, 2023
Int. Cl. G11C 11/22 (2006.01); G11C 15/04 (2006.01)
CPC G11C 11/2275 (2013.01) [G11C 11/2255 (2013.01); G11C 11/2297 (2013.01); G11C 15/04 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A ternary content addressable memory (TCAM) comprising:
a cell array unit having a plurality of TCAM cells, each comprising two self-rectifying ferroelectric tunnel junction elements (hereinafter, SR-FTJ) connected between a corresponding match line of a plurality of match lines extending in a first direction and a corresponding bit line pair of a plurality of bit line pairs extending in a second direction intersecting the first direction;
a precharge unit precharging a corresponding match line of the plurality of match lines to a power supply voltage level in response to a precharge signal; and
a data input/output unit having a plurality of access transistor pairs electrically connecting or disconnecting a corresponding bit line pair among the plurality of bit line pairs and a source line, in response to a voltage applied through a corresponding search line pair among a plurality of search line pairs according to data to be written or searched.