US 12,223,252 B2
Through-silicon via in integrated circuit packaging
Fong-yuan Chang, Hsinchu (TW); Chin-Chou Liu, Jhubei (TW); Chin-Her Chien, Chung-Li (TW); Cheng-Hung Yeh, Jhunan Township (TW); Po-Hsiang Huang, Tainan (TW); Sen-Bor Jan, Tainan (TW); Yi-Kan Cheng, Taipei (TW); and Hsiu-Chuan Shu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 17, 2023, as Appl. No. 18/171,072.
Application 17/179,904 is a division of application No. 16/460,137, filed on Jul. 2, 2019, granted, now 10,949,597, issued on Jun. 16, 2021.
Application 18/171,072 is a continuation of application No. 17/179,904, filed on Feb. 19, 2021, granted, now 11,586,797.
Claims priority of provisional application 62/698,758, filed on Jul. 16, 2018.
Prior Publication US 2023/0205967 A1, Jun. 29, 2023
Int. Cl. G06F 30/394 (2020.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01)
CPC G06F 30/394 (2020.01) [G06F 30/392 (2020.01); G06F 30/398 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A structure, comprising:
a substrate comprising first and second surfaces;
a through-silicon-via (TSV) structure disposed in the substrate, wherein a first end portion of the TSV structure extends over the first surface of the substrate and a second end portion of the TSV structure extends below the second surface of the substrate;
a pseudo metal layer disposed on the first end portion of the TSV structure;
a via disposed on the pseudo metal layer;
a first interconnect structure disposed on the via; and
a second interconnect structure disposed on the second end portion of the TSV structure.