| CPC G06F 30/392 (2020.01) [G06F 30/398 (2020.01); G06F 2119/18 (2020.01)] | 20 Claims |
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1. A method of fabricating a semiconductor device, the method comprising:
receiving layout data including a plurality of pieces of pattern data, the plurality of pieces of pattern data having through first to Nth unique patterns (N is a natural number greater than or equal to two);
calculating first to Nth density values of the first to Nth unique patterns from the layout data and calculating first to Nth populations of the first to Nth unique patterns from the layout data;
performing sampling by selecting some unique patterns among the first to Nth unique patterns, the selecting based on the first to Nth density values and the first to Nth populations;
performing etch modeling on sampled patterns of the plurality of pieces of pattern data, the sampled patterns corresponding to the selected unique patterns,
performing an etching simulation operation on after development inspection (ADI) scanning electron microscope (SEM) image data, the etching simulation operation based on modeling data, the modeling data being a result of the etch modeling, and
validating the etch modeling by comparing a result of the etching simulation operation with an after cleaning inspection (ACI) SEM image wherein the comparing the result of the etching simulation operation with an ACI SEM image includes
generating displacement differences between the result of the etching simulation operation and the ACI SEM image, and
calculating a root mean squared (RMS) value on the basis of the generated displacement differences.
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