US 12,223,190 B2
Measurement of representative charge loss in a block to determine charge loss state
Patrick R. Khayat, San Diego, CA (US); Steven Michael Kientz, Westminster, CO (US); Sivagnanam Parthasarathy, Carlsbad, CA (US); Mustafa N. Kaynak, San Diego, CA (US); and Vamsi Pavan Rayaprolu, San Jose, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 19, 2023, as Appl. No. 18/370,342.
Application 18/370,342 is a continuation of application No. 17/675,624, filed on Feb. 18, 2022, granted, now 11,797,205.
Prior Publication US 2024/0004567 A1, Jan. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/064 (2013.01) [G06F 3/0625 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
determining respective levels of charge loss associated with a plurality of representative wordlines of a block of the memory device;
determining whether a difference between the respective levels of charge loss is greater than or equal to a threshold amount; and
responsive to determining that the difference between the respective levels of charge loss is greater than or equal to the threshold amount, determining that the block is in a mixed charge loss state.