US 12,222,690 B2
Process recipe search apparatus, etching recipe search method and semiconductor device manufacturing system
Takashi Dobashi, Hillsboro, OR (US); Hiroyuki Kobayashi, Hillsboro, OR (US); and Takeshi Ohmori, Tokyo (JP)
Assigned to Hitachi High-Tech Corporation, Tokyo (JP)
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
Filed on Jul. 8, 2021, as Appl. No. 17/370,131.
Prior Publication US 2023/0012173 A1, Jan. 12, 2023
Int. Cl. G05B 13/04 (2006.01); G06N 20/00 (2019.01); G06T 7/00 (2017.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01)
CPC G05B 13/042 (2013.01) [G06N 20/00 (2019.01); G06T 7/0006 (2013.01); H01L 21/3065 (2013.01); H01L 21/67253 (2013.01); H01L 22/20 (2013.01); G05B 2219/45031 (2013.01); G06T 2207/20081 (2013.01); G06T 2207/30148 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A plasma processing apparatus that searches for an etching recipe that is a parameter of the plasma processing apparatus set so as to etch a sample into a desired shape, the apparatus comprising:
a processor configured to
determine a target shape that defines the desired shape by a plurality of shape elements;
create a machine learning model that predicts a process shape of the sample processed by the plasma processing apparatus from the parameter of the plasma processing apparatus;
search, using the machine learning model, for a candidate etching recipe that becomes a candidate of the etching recipe;
output, on a display device, a predicted process shape of the sample by the candidate etching recipe predicted by using the machine learning model and decides, as a process recipe that is set to the plasma processing apparatus to cause the sample to be etched, the candidate etching recipe chosen from the displayed candidate etching recipes;
highlighting a difference between the predicted process shape and the target shape to display the predicted process shape on the display device;
output, on the display device, the predicted process shape of the sample predicted by using the machine learning model, by a sensitivity evaluation etching recipe in which at least one parameter included in the candidate etching recipe is changed;
superimpose each of the predicted process shape by the candidate etching recipe and the predicted process shape by the sensitivity evaluation etching recipe in a state where the difference from the target shape is highlighted; and
output the superimposed predicted process shapes on the display device; and
a computer configured to control etching of the sample by the plasma processing apparatus in accordance with the chosen etching recipe.