US 12,222,641 B2
Method and device for optimizing mask parameters
Jianfang He, Beijing (CN); Yayi Wei, Beijing (CN); Yajuan Su, Beijing (CN); Lisong Dong, Beijing (CN); Libin Zhang, Beijing (CN); Rui Chen, Beijing (CN); and Le Ma, Beijing (CN)
Assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
Appl. No. 17/773,668
Filed by INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
PCT Filed Nov. 8, 2021, PCT No. PCT/CN2021/129295
§ 371(c)(1), (2) Date May 2, 2022,
PCT Pub. No. WO2023/070738, PCT Pub. Date May 4, 2023.
Claims priority of application No. 202111274722.2 (CN), filed on Oct. 29, 2021.
Prior Publication US 2024/0176228 A1, May 30, 2024
Int. Cl. G03F 1/70 (2012.01); G03F 1/44 (2012.01); G03F 7/00 (2006.01)
CPC G03F 1/44 (2013.01) [G03F 1/70 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for optimizing mask parameters, the method comprising:
acquiring a test pattern, light source parameters, and initial mask parameters, the initial mask parameters comprising a mask thickness and an initial mask sidewall angle;
generating multiple sets of candidate mask parameters according to the initial mask sidewall angle in the initial mask parameters; wherein the multiple sets of candidate mask parameters comprising different mask sidewall angles and the same mask thickness;
obtaining an imaging contrast of each set of candidate mask parameters based on the test pattern and the light source parameters; and
selecting an optimal mask sidewall angle from the multiple sets of candidate mask parameters according to the imaging contrasts.