US 12,222,639 B2
Extreme ultraviolet mask and method of manufacturing the same
Yun-Yue Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 20, 2023, as Appl. No. 18/224,499.
Application 18/224,499 is a continuation of application No. 17/216,526, filed on Mar. 29, 2021, granted, now 11,789,355.
Application 17/216,526 is a continuation of application No. 15/967,133, filed on Apr. 30, 2018, granted, now 10,962,873, issued on Mar. 30, 2021.
Claims priority of provisional application 62/565,714, filed on Sep. 29, 2017.
Prior Publication US 2023/0359115 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/24 (2012.01); G03F 1/22 (2012.01); G03F 1/38 (2012.01); G03F 1/54 (2012.01)
CPC G03F 1/22 (2013.01) [G03F 1/24 (2013.01); G03F 1/38 (2013.01); G03F 1/54 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed on the reflective multilayer;
an absorber layer disposed on the capping layer;
a circuit pattern formed in the absorber layer;
a black border pattern comprising a trench formed in the absorber layer, the capping layer, and the reflective multilayer, and surrounding the circuit pattern; and
a passivation layer disposed along sidewalls of the trench of the black border pattern and an upper surface of the capping layer in the circuit pattern, wherein the passivation layer covers sidewalls of the reflective multilayer and sidewalls of the absorber layer.