US 12,222,542 B2
Photonic device on a semiconductor-on-insulator substrate and method of manufacturing thereof
Yueh Ying Lee, Hsinchu (TW); Tzu-Chung Tsai, Hsinchu (TW); Chien-Ying Wu, Hsinchu (TW); and Jhih-Ming Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 22, 2021, as Appl. No. 17/560,001.
Claims priority of provisional application 63/178,796, filed on Apr. 23, 2021.
Prior Publication US 2022/0342149 A1, Oct. 27, 2022
Int. Cl. G02B 6/122 (2006.01); G02B 6/136 (2006.01)
CPC G02B 6/122 (2013.01) [G02B 6/136 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a photonic device comprising:
forming a photonic device structure comprising a SOI substrate, wherein the SOI substrate comprises a bulk substrate layer, a buried oxide layer on the bulk substrate layer and an active semiconductor layer on the buried oxide layer;
forming an electrically conducting layer in electrical contact with the buried oxide layer; and
forming a BEOL structure on a surface of the active semiconductor layer.