US 12,222,387 B2
Semiconductor device inspection method and semiconductor device inspection apparatus
Norimichi Chinone, Hamamatsu (JP); Tomonori Nakamura, Hamamatsu (JP); Akira Shimase, Hamamatsu (JP); and Shigeru Eura, Hamamatsu (JP)
Assigned to HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
Appl. No. 17/926,376
Filed by HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
PCT Filed Apr. 5, 2021, PCT No. PCT/JP2021/014481
§ 371(c)(1), (2) Date Nov. 18, 2022,
PCT Pub. No. WO2021/241007, PCT Pub. Date Dec. 2, 2021.
Claims priority of application No. 2020-091377 (JP), filed on May 26, 2020.
Prior Publication US 2023/0184827 A1, Jun. 15, 2023
Int. Cl. G01R 31/311 (2006.01); G01R 31/28 (2006.01)
CPC G01R 31/311 (2013.01) [G01R 31/2837 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device inspection method, comprising:
supplying power to a semiconductor device and measuring electrical characteristics of the semiconductor device according to the supply of the power;
scanning the semiconductor device with light intensity-modulated with a first frequency and light intensity-modulated with a second frequency higher than the first frequency and acquiring a characteristic signal indicating the electrical characteristics of the first frequency component and the second frequency component according to the scanning;
calculating a frequency of the characteristic signal at which the characteristic signal at a first scanning position reflecting the electrical characteristics of a first position in an optical axis direction of the light in the semiconductor device and the characteristic signal at a second scanning position reflecting the electrical characteristics of a second position in the optical axis direction of the light in the semiconductor device have a predetermined phase difference;
correcting a phase component of the characteristic signal at an arbitrary scanning position with a phase component of the characteristic signal at the first scanning position in the semiconductor device as a reference; and
acquiring the characteristic signal at the arbitrary scanning position at the calculated frequency and outputting an in-phase component and a quadrature component of the characteristic signal.