US 12,222,381 B2
Thin film sensor and manufacturing method thereof
Feng Wang, Beijing (CN); Jian Zhou, Beijing (CN); Yanzhao Li, Beijing (CN); and Feng Qu, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/637,908
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Mar. 23, 2021, PCT No. PCT/CN2021/082275
§ 371(c)(1), (2) Date Feb. 24, 2022,
PCT Pub. No. WO2022/198431, PCT Pub. Date Sep. 29, 2022.
Prior Publication US 2024/0094274 A1, Mar. 21, 2024
Int. Cl. G01R 29/08 (2006.01)
CPC G01R 29/0885 (2013.01) 18 Claims
OG exemplary drawing
 
1. A thin film sensor, comprising:
a base substrate,
a plurality of conductive wires on the base substrate, which intersect each other to define a plurality of hollow-out parts; and
a functional structure on the base substrate; wherein the functional structure is configured to allow at least part of light, which is transmitted along a preset direction and enters the functional structure from regions where the conductive wires are located, to exit from the hollow-out parts, and the preset direction is a direction from the base substrate towards the conductive wires;
a planarization layer covering a side of the plurality of conductive wires away from the base substrate, wherein
the functional structure comprises: a first medium layer on a side of the conductive wires close to the base substrate; wherein the first medium layer covers sidewalls of the first medium layer and a refractive index of the first medium layer is less than that of the planarization layer; and
the first medium layer comprises a plurality of first main portions intersecting each other, wherein an orthographic projection of each first main portion on the base substrate and an orthographic projection of the conductive wire corresponding to the first main portion on the base substrate are the same in shape and coincide.