| CPC G01N 9/24 (2013.01) [H01Q 1/40 (2013.01); H01Q 9/30 (2013.01)] | 17 Claims |

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1. An apparatus for measuring parameters of plasma, the apparatus comprising:
a cutoff probe; and
at least one processor configured to provide, to the cutoff probe, a signal for measuring the parameters of the plasma in a plasma processing apparatus,
wherein the cutoff probe comprises:
a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by the at least one processor;
a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave that has been emitted by the first antenna and transferred through the plasma;
a first signal line connecting the first antenna to the at least one processor;
a second signal line connecting the second antenna to the at least one processor;
a first insulating layer covering the first signal line;
a second insulating layer covering the second signal line;
a first shield covering the first insulating layer;
a second shield covering the second insulating layer;
an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield;
a first antenna protection layer comprising a first insulating material and covering the first antenna, wherein the first antenna protection layer includes a first insulating portion and a second insulating portion, and wherein: i) the first insulating portion is in contact with a side surface of the first antenna, and ii) the second insulating portion is in contact with an end of the first antenna; and
a second antenna protection layer comprising a second insulating material and covering the second antenna.
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