US 12,222,317 B2
Integrated circuit with BioFETs
Tung-Tsun Chen, Hsinchu (TW); Yi-Hsing Hsiao, Hsinchu (TW); Jui-Cheng Huang, Hsinchu (TW); and Yu-Jie Huang, Kaohsiung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Nov. 30, 2023, as Appl. No. 18/525,583.
Application 17/884,382 is a division of application No. 17/007,973, filed on Aug. 31, 2020, granted, now 11,860,120.
Application 18/525,583 is a continuation of application No. 17/884,382, filed on Aug. 9, 2022, granted, now 11,860,121.
Prior Publication US 2024/0102959 A1, Mar. 28, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G01N 27/414 (2006.01); G01N 33/569 (2006.01); H01L 21/762 (2006.01)
CPC G01N 27/4148 (2013.01) [G01N 27/4145 (2013.01); G01N 33/56966 (2013.01); H01L 21/76251 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) structure, comprising:
a biologically sensitive field-effect transistor (BioFET) in a semiconductor substrate;
a dielectric layer over a backside surface of the semiconductor substrate, the dielectric layer having a sensing well extending through the dielectric layer to a channel region of the BioFET;
a biosensing film lining the sensing well in the dielectric layer;
a plurality of fluid channel walls over the biosensing film and defining a fluid containment region over the sensing well extending through the dielectric layer;
a first heater in the semiconductor substrate having at least a portion of the first heater overlapping with the fluid containment region; and
a coating of cardiac cell binding agent over the biosensing film and under the plurality of fluid channel walls, wherein one of the plurality of fluid channel walls forms an interface with the coating of cardiac cell binding agent, and an entirety of the interface vertically overlaps with the first heater in the semiconductor substrate.