CPC G01N 27/4145 (2013.01) [G01N 27/3272 (2013.01); G01N 27/4146 (2013.01); G01N 33/539 (2013.01)] | 28 Claims |
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a buried oxide layer over the substrate;
forming a device layer over the buried oxide layer
forming a cavity through the substrate while leaving the buried oxide layer disposed over the cavity, wherein a portion of the device layer and buried oxide layer disposed over the cavity forms a membrane;
forming a plurality of openings through the membrane and extending to the cavity;
depositing aluminum oxide over a sidewall of the openings through the membrane and further over the buried oxide layer within the cavity; and
forming a backside contact over a surface of the substrate opposite the device layer, wherein the backside contact includes a port extending into the cavity adapted to introduce a reactive solution into the cavity.
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