US 12,222,315 B2
Method of sensing on a FET-type gas sensor using charge storage engineering effect
Jong-Ho Lee, Seoul (KR); and Won-Jun Shin, Seoul (KR)
Assigned to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
Filed by Seoul National University R&DB FOUNDATION, Seoul (KR)
Filed on May 4, 2022, as Appl. No. 17/736,988.
Claims priority of application No. 10-2021-0067172 (KR), filed on May 25, 2021.
Prior Publication US 2022/0381727 A1, Dec. 1, 2022
Int. Cl. G01N 27/414 (2006.01)
CPC G01N 27/4143 (2013.01) 9 Claims
OG exemplary drawing
 
1. A sensing method of a FET-type sensor comprising a FET transducer with a horizontal floating gate, a passivation layer provided on at least an upper portion of the FET transducer, a control gate provided on a portion of the passivation layer spaced apart from the floating gate to face the floating gate, and a sensing material layer provided on a part of the control gate facing the floating gate, a region between the control gate and the floating gate, and a part of an upper portion of the passivation layer provided on the floating gate, which comprises the following step to improve or decrease reactivity to a gas to be sensed:
(a) applying a preset erase voltage (Erase bias) or program voltage (Program bias) to the control gate according to the type of gas to be sensed to change a threshold voltage of the FET transducer and control the charge at an interface between the passivation layer located on the floating gate and the sensing material layer.