| CPC G01N 21/211 (2013.01) [G01B 11/2441 (2013.01); G01N 21/956 (2013.01); G02B 27/283 (2013.01); G01B 2210/56 (2013.01)] | 20 Claims |
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1. A semiconductor measurement apparatus comprising:
an illumination unit configured to select light having different wavelengths and provide the light as illumination light;
an optical unit including a polarization generator configured to select a polarization state of the illumination light, an objective lens configured to allow the illumination light to be incident on a sample, and a beam splitter configured to transmit reflection light generated when the illumination light is reflected from the sample;
a self-interference generator configured to self-interfere and transmit the reflection light transmitted from the beam splitter, for each wavelength;
an image sensor configured to output a measurement image including an interference pattern of the reflection light on a back focal plane of the objective lens; and
a controller configured to process the measurement image to determine a critical dimension of a structure included in a region of the sample on which the illumination light is incident,
wherein the controller is configured to find regions of a plurality of interference components caused by self-interference corresponding to a wavelength selected by the illumination unit by transforming the measurement image into data in a two-dimensional frequency space, to obtain two-dimensional images divided for each wavelength on the back focal plane by inversely transforming data included in each of the regions of the plurality of interference components, and to determine critical dimensions of the structure using the two-dimensional images.
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