US 12,221,722 B2
Melt electrospinning device and method
Tao Yang, Beijing (CN); Dazhou Yan, Beijing (CN); Cheng Liu, Beijing (CN); Wenxue Si, Beijing (CN); Qiang Sun, Beijing (CN); Ye Wan, Beijing (CN); and Shengxue Zhang, Beijing (CN)
Assigned to China ENFI Engineering Corporation, Beijing (CN); and China Silicon Corporation Ltd., Henan (CN)
Appl. No. 17/312,846
Filed by China ENFI Engineering Corporation, Beijing (CN); and China Silicon Corporation Ltd., Henan (CN)
PCT Filed Jan. 20, 2020, PCT No. PCT/CN2020/073284
§ 371(c)(1), (2) Date Jun. 10, 2021,
PCT Pub. No. WO2020/199736, PCT Pub. Date Oct. 8, 2020.
Claims priority of application No. 201910266659.4 (CN), filed on Apr. 3, 2019; and application No. 201910267466.0 (CN), filed on Apr. 3, 2019.
Prior Publication US 2022/0010459 A1, Jan. 13, 2022
Int. Cl. D01D 5/00 (2006.01); D01D 1/04 (2006.01); D01F 9/08 (2006.01)
CPC D01D 5/0069 (2013.01) [D01D 1/04 (2013.01); D01D 5/0015 (2013.01); D01D 5/0092 (2013.01); D01F 9/08 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A melt electrospinning method, comprising:
heating an inorganic material to a molten state to form a melt;
shaping the melt into fibers by electrospinning,
wherein the inorganic material is silicon or tin;
a flow rate of the melt during the electrospinning process is 2-10 μL/min;
wherein the melt electrospinning is carried out under vacuum, an inert atmosphere or a reductive atmosphere, the inert atmosphere is selected from one or more of nitrogen and argon, the reductive atmosphere comprises hydrogen; and
wherein the melt electrospinning is carried out at an ambient temperature of not higher than 100° C. and a pressure of normal pressure.