US 12,221,719 B2
High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell nanowires
Shanthi Iyer, Greensboro, NC (US); Jia Li, Greensboro, NC (US); Prithviraj Deshmukh, Hillsboro, OR (US); and Manish Sharma, Hillsboro, OR (US)
Assigned to North Carolina A&T State University, Greensboro, NC (US)
Filed by North Carolina A&T State University, Greensboro, NC (US)
Filed on Jan. 29, 2024, as Appl. No. 18/425,387.
Application 18/425,387 is a continuation of application No. 17/229,066, filed on Apr. 13, 2021, granted, now 11,905,622.
Claims priority of provisional application 63/009,672, filed on Apr. 14, 2020.
Prior Publication US 2024/0218563 A1, Jul. 4, 2024
Int. Cl. C30B 29/40 (2006.01); C30B 23/02 (2006.01); C30B 29/60 (2006.01)
CPC C30B 29/403 (2013.01) [C30B 23/02 (2013.01); C30B 29/40 (2013.01); C30B 29/605 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of synthesizing a core-shell nanowire, the method comprising:
forming a nanowire core by depositing first precursor sources on a growth substrate; and
surrounding the nanowire core with a first shell by depositing the first precursor sources on the nanowire core in presence of nitrogen (N) plasma;
wherein the core-shell nanowire is grown vertically relative to the growth substrate; and
wherein the first precursor sources are gallium (Ga), arsenic (As), and antimony (Sb).