US 12,221,699 B2
Plating stack
Kenji Yoshiba, Tokyo (JP); Yusuke Yaguchi, Tokyo (JP); and Hiroshi Minowa, Tokyo (JP)
Assigned to JAPAN PURE CHEMICAL CO., LTD., Tokyo (JP)
Appl. No. 17/799,962
Filed by JAPAN PURE CHEMICAL CO., LTD., Tokyo (JP)
PCT Filed Feb. 3, 2021, PCT No. PCT/JP2021/003848
§ 371(c)(1), (2) Date Aug. 16, 2022,
PCT Pub. No. WO2021/166641, PCT Pub. Date Aug. 26, 2021.
Claims priority of application No. 2020-025109 (JP), filed on Feb. 18, 2020.
Prior Publication US 2023/0065609 A1, Mar. 2, 2023
Int. Cl. C23C 18/16 (2006.01); C23C 18/24 (2006.01); C23C 18/34 (2006.01); C23C 18/42 (2006.01); C23C 18/54 (2006.01)
CPC C23C 18/1651 (2013.01) [C23C 18/24 (2013.01); C23C 18/34 (2013.01); C23C 18/42 (2013.01); C23C 18/54 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for producing a plating stack in which a plating layer A mainly composed of a second metal is deposited on an object to be plated mainly composed of a first metal, then a plating layer B mainly composed of palladium is deposited on the plating layer A, and then a plating layer C mainly composed of nickel is deposited on the plating layer B,
wherein the plating layer A is a porous film or a nucleus-like layer,
wherein the plating layer B is a substitution plating layer formed by a substitution reaction between an ion of palladium contained in a substitution plating solution, and the first metal contained in the object to be plated,
wherein the plating layer C is a reduction plating layer formed by a redox reaction between a reducing agent and a nickel ion contained in a reduction plating solution.