US 12,221,575 B2
Method for preparing ZnSe quantum dot, ZnSe quantum dot, ZnSe structure and display device
Haizheng Zhong, Beijing (CN); Zhiwei Long, Beijing (CN); Gaoling Yang, Beijing (CN); Kai Gu, Beijing (CN); Yang Liu, Beijing (CN); and Zhuo Chen, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., (CN)
Appl. No. 17/598,638
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Dec. 25, 2020, PCT No. PCT/CN2020/139548
§ 371(c)(1), (2) Date Sep. 27, 2021,
PCT Pub. No. WO2022/134044, PCT Pub. Date Jun. 30, 2022.
Prior Publication US 2022/0396729 A1, Dec. 15, 2022
Int. Cl. C09K 11/88 (2006.01); B82Y 40/00 (2011.01); C01B 19/04 (2006.01); C01G 9/00 (2006.01)
CPC C09K 11/883 (2013.01) [B82Y 40/00 (2013.01); C01B 19/04 (2013.01); C01G 9/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for preparing a ZnSe quantum dot, comprising the following operations:
preparing a first zinc precursor solution, a second zinc precursor solution, a first selenium precursor solution, and a second selenium precursor solution with a lower reaction activity than the first selenium precursor solution;
adding the first selenium precursor solution to the second zinc precursor solution to form an intermediate of the ZnSe quantum dot; and
performing the following operation at least once to form the ZnSe quantum dot:
sequentially adding the first zinc precursor solution and the second selenium precursor solution to the intermediate of the ZnSe quantum dot and making the first zinc precursor solution, the second selenium precursor solution, and the intermediate of the ZnSe quantum dot react;
wherein the performing the following operation at least once to form the ZnSe quantum dot comprises:
under 250° C.˜350° C., sequentially adding the first zinc precursor solution at room temperature and the second selenium precursor solution at room temperature to the intermediate of the ZnSe quantum dot, and reacting for 1 minute to 2 hours, repeating this operation at least once to form the ZnSe quantum dot.