US 12,221,394 B2
Doped or alloyed materials and hot isostatic pressing method of making same
Gary Cook, Beavercreek, OH (US); and Ronald W. Stites, Beavercreek, OH (US)
Assigned to United States of America as represented by the Secretary of the Air Force, Wright-Patterson AFB, OH (US)
Filed by Government of the United States, as represented by the Secretary of the Air Force, Wright-Patterson AFB, OH (US)
Filed on Sep. 22, 2023, as Appl. No. 18/472,560.
Application 18/472,560 is a division of application No. 16/067,209, granted, now 11,814,326, previously published as PCT/US2017/025719, filed on Apr. 3, 2017.
Claims priority of provisional application 62/368,665, filed on Jul. 29, 2016.
Claims priority of provisional application 62/320,110, filed on Apr. 8, 2016.
Prior Publication US 2024/0010575 A1, Jan. 11, 2024
Int. Cl. C04B 41/51 (2006.01); C04B 35/547 (2006.01); C04B 41/00 (2006.01); C04B 41/45 (2006.01)
CPC C04B 41/5133 (2013.01) [C04B 35/547 (2013.01); C04B 41/0072 (2013.01); C04B 41/009 (2013.01); C04B 41/4517 (2013.01); C04B 41/4521 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A doped substrate comprising:
a substrate comprising at least one of a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material; and
a dopant comprising one or more transition metals, one or more rare earth elements, or a combination of both, the doped substrate characterized in that a spectral laser output of the doped substrate exhibits a nominally single frequency having a linewidth less than about 5 nm.