US 12,221,339 B2
Semiconductor device and method of manufacturing semiconductor device
Ki Yeul Yang, Incheon (KR); Kyung Han Ryu, Incheon (KR); Seok Hun Yun, Incheon (KR); Bora Baloglu, Oporto (PT); Hyun Cho, Incheon (KR); and Ramakanth Alapati, Dublin, CA (US)
Assigned to Amkor Technology Singapore Holding Pte. Ltd., Singapore (SG)
Filed by Amkor Technology Singapore Holding Pte. Ltd., Valley Point (SG)
Filed on Feb. 8, 2024, as Appl. No. 18/436,950.
Application 18/436,950 is a division of application No. 17/832,904, filed on Jun. 6, 2022, granted, now 11,897,761, issued on Feb. 13, 2024.
Application 17/832,904 is a division of application No. 16/448,901, filed on Jun. 21, 2019, granted, now 11,352,252, issued on Jun. 7, 2022.
Prior Publication US 2024/0190700 A1, Jun. 13, 2024
Int. Cl. H01L 23/48 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01)
CPC B81C 1/00182 (2013.01) [B81B 7/007 (2013.01); B81C 1/00158 (2013.01); B81C 1/00301 (2013.01); H01L 23/481 (2013.01); B81B 2201/02 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a base substrate comprising:
a substrate top side; a substrate bottom side opposite to the substrate top side; a passageway extending through the base substrate from the substrate top side to the substrate bottom side; a first conductive structure; and a dielectric structure;
a sensor device comprising: a sensor top side; a sensor bottom side opposite to the sensor top side; and a cavity extending partially inward from the sensor bottom side; and a barrier attached to the sensor bottom side and extending across the cavity, wherein: the sensor device is coupled to the first conductive structure;
the barrier comprises first barrier strand structures defining first barrier through-holes; and the barrier is attached to the substrate top side so that the first barrier through-holes overlie the passageway and the barrier is interposed between the sensor bottom side and the substrate top side; and one or more of: second barrier strand structures attached to the first barrier strand structures, the second barrier strand structures defining second barrier through-holes that are offset with respect to the first barrier through-holes; a conformal layer over the first barrier strand structures.