US 12,220,987 B2
High voltage power converter
Uwe Waltrich, Forchheim (DE); Stanley Buchert, Herzogenaurach (DE); Marco Bohlländer, Hirschaid (DE); and Claus Müller, Wolfratshausen (DE)
Assigned to Rolls-Royce Deutschland Ltd & Co KG, Blankenfelde-Mahlow (DE)
Filed by Rolls-Royce Deutschland Ltd & Co KG, Blankenfelde-Mahlow (DE)
Filed on Apr. 3, 2024, as Appl. No. 18/625,536.
Application 18/625,536 is a continuation of application No. 18/212,822, filed on Jun. 22, 2023, granted, now 11,975,611.
Application 18/212,822 is a continuation of application No. 18/081,315, filed on Dec. 14, 2022, granted, now 11,745,599, issued on Sep. 5, 2023.
Application 18/081,315 is a continuation of application No. 17/899,960, filed on Aug. 31, 2022, granted, now 11,634,034, issued on Apr. 25, 2023.
Claims priority of application No. 10 2022 205 483.0 (DE), filed on May 31, 2022.
Prior Publication US 2024/0270081 A1, Aug. 15, 2024
Int. Cl. B60L 15/00 (2006.01)
CPC B60L 15/007 (2013.01) [B60L 2210/14 (2013.01); B60L 2210/30 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A power electronics converter comprising:
a multi-layer planar carrier substrate defining an x-y direction parallel to a planar surface of the multi-layer planar carrier substrate and a z-direction perpendicular to the x-y direction, the multi-layer planar carrier substrate comprising a plurality of electrically conductive layers extending in the x-y direction and at least one electrical connection extending in the z-direction; and
a converter commutation cell comprising a power circuit and a gate driver circuit, the power circuit comprising at least one power semiconductor switching element and at least one capacitor,
wherein each power semiconductor switching element of the at least one power semiconducting switching element is comprised in a power semiconductor prepackage,
wherein the power semiconductor prepackage comprises one or more power semiconductor switching elements embedded in a solid insulating material,
wherein the power semiconductor prepackage further comprises at least one electrical connection extending in the z-direction from at least one terminal of each power semiconductor switching element of the one or more power semiconductor switching elements through the solid insulating material to an electrical connection side of the power semiconductor prepackage,
wherein at least one terminal of each power semiconductor switching element of the one or more power semiconductor switching elements of the power semiconductor prepackage is connected to at least one electrically conductive layer of the plurality of electrically conductive layers of the multi-layer planar carrier substrate at the electrical connection side of the power semiconductor prepackage,
wherein the electrical connection side of the power semiconductor prepackage is spaced apart in the z-direction from the multi-layer planar carrier substrate such that a prepackage gap between the multi-layer planar carrier substrate and the electrical connection side is defined, and
wherein a peak rated power output of the power electronics converter is greater than or equal to 25 kW and a converter parameter θ is less than or equal to 300 μm2/V, wherein the converter parameter θ is a size in the z-direction of the prepackage gap divided by a maximum electric field strength in the prepackage gap.