US 12,220,784 B2
Chemical mechanical polishing pad and preparation thereof
Bainian Qian, Newark, DE (US); Robert M. Blomquist, River Edge, NJ (US); Lyla M. El-Sayed, Boonton, NJ (US); Michael E. Mills, Bear, DE (US); Kancharla-Arun Reddy, Wilmington, DE (US); Bradley K. Taylor, West Chester, PA (US); and Shijing Xia, Hockessin, DE (US)
Assigned to Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark, DE (US)
Filed by Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark, DE (US); and DuPont Electronics, Inc., Wilmington, DE (US)
Filed on Oct. 13, 2021, as Appl. No. 17/500,630.
Prior Publication US 2023/0112228 A1, Apr. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. B24B 37/00 (2012.01); B24B 37/22 (2012.01); B24B 37/24 (2012.01); B24B 37/26 (2012.01); B24D 3/28 (2006.01); H01L 21/306 (2006.01)
CPC B24B 37/22 (2013.01) [B24B 37/24 (2013.01); B24B 37/26 (2013.01); B24D 3/28 (2013.01); H01L 21/30625 (2013.01)] 8 Claims
 
1. A chemical mechanical polishing pad suitable for polishing at least one of a semiconductor substrate, an optical substrate and a magnetic substrate, the polishing pad having a polishing layer, the polishing layer being cured from an extruded sheet, the extruded sheet comprising a photopolymerizable composition comprising a styrenic block copolymer, a UV curable acrylate, polybutadiene oil and a photoinitiator, wherein said styrenic block copolymer is one or more members selected from the group consisting of a styrene-butadiene styrene (SBS) block copolymer, a styrene-isoprene-styrene (SIS) block copolymer, a styrene-ethylene-butene-styrene (SEBS) block copolymer a styrene-ethylene-propylene-styrene (SEPS) block copolymer, and mixtures thereof and the styrenic block copolymer is present at an amount of greater than 50 wt %, based on the total weight of the extruded sheet, and wherein upon UV curing, the extruded sheet having a Shore D hardness in the range of 40 to 70.