US 12,220,726 B2
Silicide capacitive micro electromechanical structure and fabrication method thereof
Di-Bao Wang, Hsinchu (TW); and Chun-Chieh Lin, Hsinchu (TW)
Assigned to TAIWAN-ASIA SEMICONDUCTOR CORPORATION, Hsinchu (TW)
Filed by Taiwan-Asia Semiconductor Corporation, Hsinchu (TW)
Filed on Oct. 13, 2022, as Appl. No. 17/965,533.
Claims priority of provisional application 63/255,020, filed on Oct. 13, 2021.
Prior Publication US 2023/0116389 A1, Apr. 13, 2023
Int. Cl. B06B 1/02 (2006.01)
CPC B06B 1/0292 (2013.01) 22 Claims
OG exemplary drawing
 
1. A silicide capacitive micro electromechanical structure, comprising:
a substrate;
a passivation layer formed on said substrate;
a silicon layer formed on said passivation layer;
a first metal layer formed on said passivation layer and including a contact part and a conductive part, said contact part contacting at least partial of said silicon layer and said conductive part extending away from said silicon layer to be electrically connected to an external circuit; and
a dielectric layer formed on said passivation layer and covering at least said silicon layer;
wherein after an annealing process, the electrical connection to said external circuit remains by having said conductive part stay contacting said silicon layer after silicidation reaction.