US 12,220,696 B2
Microfluidic film and method for fabricating the microfluidic film
Taesung Kim, Ulsan (KR); Juyeol Bae, Ulsan (KR); and Ronghui Wu, Ulsan (KR)
Assigned to UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY), Ulsan (KR)
Filed by UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY), Ulsan (KR)
Filed on Sep. 19, 2022, as Appl. No. 17/947,204.
Claims priority of application No. 10-2021-0126355 (KR), filed on Sep. 24, 2021.
Prior Publication US 2023/0098605 A1, Mar. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. B29C 33/38 (2006.01); B01L 3/00 (2006.01); B29C 33/52 (2006.01); B81C 1/00 (2006.01); B29K 83/00 (2006.01)
CPC B01L 3/502707 (2013.01) [B29C 33/3842 (2013.01); B29C 33/52 (2013.01); B81C 1/00119 (2013.01); B01L 2300/0874 (2013.01); B29K 2083/00 (2013.01); B81C 2201/0108 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of fabricating a microfluidic film, the method comprising:
fabricating a basic mold, the basic mold comprising a base member, a first base groove formed on the base member to extend in a longitudinal direction and having a storage space therein, a second base groove formed on the base member, being spaced apart from the first base groove and having a storage space therein, and a third base groove formed between the first base groove and the second base groove so that the first base groove and the second base groove communicate with each other;
fabricating a master mold that is repeatedly usable by using the basic mold as a template; and
fabricating a microfluidic film by using the master mold as a template, the microfluidic film comprising a microchannel through which a fluid flows and a through passage for communicating with the microfluidic film stacked on an upper portion or a lower portion of the microchannel,
wherein, in the fabricating of the basic mold, the base member is a silicon wafer, and the fabricating of the basic mold comprises:
a first exposure operation in which a first photoresist is applied onto the silicon wafer, a first mask having a first pattern for forming the third base groove therein is disposed at an upper portion of the first photoresist and light is irradiated to the first mask; and
a first etching exposure operation in which the silicon wafer that has undergone the first exposure operation is etched by using a developing agent,
wherein the first base groove comprises a first base lower groove having a small width of a lower part and a first base upper groove communicating with an upper part of the first base lower groove and extending upward, and
the method further comprises:
a second exposure operation in which, after the first photoresist is removed, a second photoresist is applied onto the silicon wafer, a second mask having a second pattern for forming the first base lower groove therein is disposed at an upper portion of the second photoresist and light is irradiated onto the second mask;
a second etching operation in which the silicon wafer that has undergone the second exposure operation is etched by using a developing agent;
a third exposure operation in which, after the second photoresist is removed, a third photoresist is applied onto the silicon wafer, a third mask having a third pattern for forming the first base upper groove and a fourth pattern for forming the second base groove therein is disposed at an upper portion of the third photoresist and light is irradiated onto the third mask; and
a third etching operation in which the silicon wafer that has undergone the third exposure operation is etched by using a developing agent.