US 12,220,205 B2
Enhanced visible near-infrared photodiode and non-invasive physiological sensor
Steven J. Wojtczuk, Lexington, MA (US); Xuebing Zhang, Acton, MA (US); and William J. MacNeish, III, Newport Beach, CA (US)
Assigned to MASIMO SEMICONDUCTOR, INC., Irvine, CA (US)
Filed by MASIMO SEMICONDUCTOR, INC., Irvine, CA (US)
Filed on Nov. 14, 2023, as Appl. No. 18/509,093.
Application 18/509,093 is a continuation of application No. 17/394,147, filed on Aug. 4, 2021, granted, now 11,850,024.
Application 17/394,147 is a continuation of application No. 16/743,864, filed on Jan. 15, 2020, granted, now 11,103,134, issued on Aug. 31, 2021.
Application 16/743,864 is a continuation of application No. 16/505,364, filed on Jul. 8, 2019, granted, now 10,568,514, issued on Feb. 25, 2020.
Application 16/505,364 is a continuation of application No. 14/858,639, filed on Sep. 18, 2015, granted, now 10,383,520, issued on Aug. 20, 2019.
Claims priority of provisional application 62/052,420, filed on Sep. 18, 2014.
Prior Publication US 2024/0285168 A1, Aug. 29, 2024
Int. Cl. A61B 5/00 (2006.01); H01L 31/0216 (2014.01); H01L 31/0304 (2006.01); H01L 31/105 (2006.01)
CPC A61B 5/0059 (2013.01) [H01L 31/02162 (2013.01); H01L 31/03046 (2013.01); H01L 31/105 (2013.01); A61B 5/6826 (2013.01); A61B 2562/0238 (2013.01); Y02E 10/544 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A sensor comprising:
a detector configured to generate a detector signal responsive to optical radiation incident on the detector,
wherein the detector comprises a window layer, a diffusion region, an absorption region, and a semiconductor wafer, the absorption region being between the window layer and the semiconductor wafer, and
wherein the window layer has a thickness between about 25 nm and about 150 nm, the diffusion region being p-type, the absorption region being undoped or n-type, the semiconductor wafer being n-type.