US 12,219,888 B2
Phase change memory and method for making the same
Zhitang Song, Shanghai (CN); and Sannian Song, Shanghai (CN)
Assigned to SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES, Shanghai (CN)
Appl. No. 17/607,892
Filed by SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCE, Shanghai (CN)
PCT Filed Nov. 4, 2019, PCT No. PCT/CN2019/115202
§ 371(c)(1), (2) Date Oct. 31, 2021,
PCT Pub. No. WO2021/003904, PCT Pub. Date Jan. 14, 2021.
Claims priority of application No. 201910610965.5 (CN), filed on Jul. 8, 2019.
Prior Publication US 2022/0231224 A1, Jul. 21, 2022
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/8616 (2023.02) [H10B 63/24 (2023.02); H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/841 (2023.02); H10N 70/8828 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A method for making a phase change memory, comprising:
preparing a substrate, and forming a laminated structure on the substrate, the laminated structure sequentially includes, from bottom to top, a first electrode material layer, a first transition material layer, an ovonic threshold switching (OTS) material layer, a second transition material layer, a second electrode material layer, a third transition material layer, a phase change material layer, a fourth transition material layer, and a third electrode material layer; wherein the first transition material layer consists of C, the second transition material layer consists of C, the third transition material layer consists of TaC, and the fourth transition material layer consists of TaC;
fabricating an isolation groove in the laminated structure, the isolation groove extends downwards from a top surface of the laminated structure to a surface of the substrate to separate the laminated structure into a plurality of columnar structures; and
forming an isolation material layer in the isolation groove, and the isolation material layer surrounds side surfaces of the columnar structure.