US 12,219,887 B2
Semiconductor device and method of manufacturing the same
Jungho Yoon, Yongin-si (KR); Soichiro Mizusaki, Suwon-si (KR); and Youngjin Cho, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 17, 2022, as Appl. No. 17/989,206.
Application 17/989,206 is a continuation of application No. 16/658,864, filed on Oct. 21, 2019, granted, now 11,557,723.
Claims priority of application No. 10-2019-0018818 (KR), filed on Feb. 18, 2019.
Prior Publication US 2023/0083978 A1, Mar. 16, 2023
Int. Cl. H10N 70/00 (2023.01); G11C 13/00 (2006.01); H10B 63/10 (2023.01)
CPC H10N 70/841 (2023.02) [G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); H10B 63/10 (2023.02); H10N 70/021 (2023.02); H10N 70/883 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a plurality of first electrode structures extending in a first direction on a top surface of the substrate, the plurality of first electrode structures having a longest dimension in the first direction, the plurality of first electrode structures being arranged in a second direction crossing the first direction;
a second electrode pattern extending in the second direction, a first portion of the second electrode pattern being disposed on the substrate, a second portion of the second electrode pattern being disposed on a top surface of each of the plurality of first electrode structures and on a sidewall of each of the plurality of first electrode structures; and
a data storage film overlapping a side surface of the second electrode pattern in the first direction, the side surface facing a direction parallel to the first direction,
wherein the data storage film has a variable resistance,
wherein the data storage film includes a first horizontal portion on a surface of the substrate, a second vertical portion on the sidewall of the first electrode structures, and the second vertical portion on the sidewall of the second electrode pattern,
wherein the data storage film includes a third horizontal portion on an upper surface of the first electrode structure, and
the data storage film includes a fourth horizontal portion on the top surface of the second electrode pattern.