US 12,219,885 B2
Reducing contact resistance of phase change memory bridge cell
Kangguo Cheng, Schenectady, NY (US); Juntao Li, Cohoes, NY (US); Zuoguang Liu, Schenectady, NY (US); and Arthur Gasasira, Halfmoon, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Nov. 19, 2021, as Appl. No. 17/531,149.
Prior Publication US 2023/0165170 A1, May 25, 2023
Int. Cl. H10N 70/20 (2023.01); H10B 63/10 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10B 63/10 (2023.02); H10N 70/021 (2023.02); H10N 70/823 (2023.02); H10N 70/841 (2023.02); H10N 70/8828 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A phase change memory comprising:
a substrate;
a plurality of first phase change elements on the substrate;
a plurality of electrodes on the plurality of first phase change elements; and
a second phase change element connecting the plurality of electrodes and disposed between the plurality of first phase change elements, wherein:
the plurality of first phase change elements on the substrate and the plurality of electrodes on the plurality of the first phase change elements form a first trench;
the second phase change element is a layer disposed on sidewalls of the first trench; and
the second phase change element forms a second trench.