US 12,219,884 B2
Phase change memory with conductive rings
Kangguo Cheng, Schenectady, NY (US); Carl Radens, LaGrangeville, NY (US); Juntao Li, Cohoes, NY (US); Ruilong Xie, Niskayuna, NY (US); Praneet Adusumilli, Somerset, NJ (US); Oscar van der Straten, Guilderland Center, NY (US); Alexander Reznicek, Troy, NY (US); Zuoguang Liu, Schenectady, NY (US); and Arthur Gasasira, Halfmoon, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 30, 2021, as Appl. No. 17/449,515.
Application 17/449,515 is a continuation in part of application No. 17/358,223, filed on Jun. 25, 2021.
Prior Publication US 2022/0416157 A1, Dec. 29, 2022
Int. Cl. H10N 70/20 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10N 70/021 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/8828 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A phase change memory comprising: a phase change material; a bottom electrode; a heater core proximately connected to the bottom electrode; a set of conductive rings surrounding the heater core, wherein the set of conductive rings comprises one or more conductive rings, and wherein the set of conductive rings are proximately connected to the phase change material; and a set of spacers, wherein a spacer, from the set of spacers, separates a portion of a conductive ring, from the set of conductive rings, from the heater core, wherein the set of conductive rings comprises a first conductive ring and a second conductive ring, and wherein the first conductive ring has a different thickness than the second conductive ring in a plan view of uppermost surfaces on the set of conductive rings.