US 12,219,881 B2
Dual layer top contact for magnetic tunnel junction stack
Ashim Dutta, Clifton Park, NY (US); and Chih-Chao Yang, Glenmont, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 26, 2021, as Appl. No. 17/485,453.
Prior Publication US 2023/0098576 A1, Mar. 30, 2023
Int. Cl. H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/10 (2023.02) [H10B 61/20 (2023.02); H10N 50/80 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a magnetic tunnel junction stack comprising a bottom electrode, magnetic tunnel junction layers upon the bottom electrode, and a top electrode upon the magnetic tunnel junction layers;
a dual layer contact upon the magnetic tunnel junction stack, the dual layer contact comprising a conductive lower contact in physical contact with the top electrode and a conductive upper contact in physical contact with at least a portion of a top surface of the conductive lower contact, wherein the conductive lower contact is wider than the conductive upper contact; and
a first interlayer dielectric (ILD) in physical contact with an outer sidewall of the conductive lower contact and in physical contact with a bottom surface of the conductive lower contact, wherein the top surface of the conductive lower contact is coplanar with a top surface of the first ILD.