US 12,219,880 B2
Integrated circuit device
Tai-Yen Peng, Hsinchu (TW); Hui-Hsien Wei, Taoyuan (TW); Wei-Chih Wen, Hsinchu County (TW); Pin-Ren Dai, Hsinchu County (TW); Chien-Min Lee, Hsinchu County (TW); Sheng-Chih Lai, Hsinchu County (TW); Han-Ting Tsai, Kaohsiung (TW); and Chung-Te Lin, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Mar. 4, 2024, as Appl. No. 18/595,256.
Application 18/595,256 is a continuation of application No. 18/312,372, filed on May 4, 2023, granted, now 12,069,958.
Application 18/312,372 is a continuation of application No. 17/221,674, filed on Apr. 2, 2021, granted, now 11,683,988, issued on Jun. 20, 2023.
Application 17/221,674 is a continuation of application No. 16/866,101, filed on May 4, 2020, granted, now 10,971,682, issued on Apr. 6, 2021.
Application 16/866,101 is a continuation of application No. 15/828,101, filed on Nov. 30, 2017, granted, now 10,644,231, issued on May 5, 2020.
Prior Publication US 2024/0206344 A1, Jun. 20, 2024
Int. Cl. H10N 50/01 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/01 (2023.02) [G11C 11/161 (2013.01); H10B 61/20 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device, comprising:
a bottom electrode contact;
a magnetic tunnel junction pattern over the bottom electrode contact;
a protection insulating layer surrounding the magnetic tunnel junction pattern;
a first capping layer surrounding the protection insulating layer;
an interlayer insulating layer surrounding the first capping layer; and
a second capping layer over the first capping layer and the interlayer insulating layer.