US 12,219,879 B2
Gradient protection layer in MTJ manufacturing
Tai-Yen Peng, Hsinchu (TW); Yu-Shu Chen, Hsinchu (TW); Sin-Yi Yang, Taichung (TW); Chen-Jung Wang, Hsinchu (TW); Chien Chung Huang, Taichung (TW); Han-Ting Lin, Hsinchu (TW); Jyu-Horng Shieh, Hsinchu (TW); and Qiang Fu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 28, 2023, as Appl. No. 18/521,399.
Application 17/120,613 is a division of application No. 16/170,750, filed on Oct. 25, 2018, granted, now 10,868,239, issued on Dec. 15, 2020.
Application 18/521,399 is a continuation of application No. 17/869,335, filed on Jul. 20, 2022, granted, now 11,856,865.
Application 17/869,335 is a continuation of application No. 17/120,613, filed on Dec. 14, 2020, granted, now 11,411,176, issued on Aug. 9, 2022.
Prior Publication US 2024/0099150 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/01 (2023.02) [H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming Magnetic Tunnel Junction (MTJ) stack layers comprising:
depositing a bottom electrode layer;
depositing a bottom magnetic electrode layer over the bottom electrode layer;
depositing a tunnel barrier layer over the bottom magnetic electrode layer;
depositing a top magnetic electrode layer over the tunnel barrier layer; and
depositing a top electrode layer over the top magnetic electrode layer;
performing a first etching process to etch an upper portion of the MTJ stack layers, wherein a first conductive material of the upper portion is re-sputtered to a sidewall of a remaining part of the upper portion; and
performing a first passivation process to convert the first conductive material to a first dielectric protection layer.