	US 12,219,878 B2
	Optoelectronic component comprising, on a single substrate, an optical transducer made of a semi-conductor material III-V and an optically scanning microelectromechanical system
François Duport, Palaiseau (FR); Guang-Hua Duan, Sceaux (FR); Frédéric Van Dijk, Palaiseau (FR); and Sylvain Delage, Orsay (FR)
Assigned to THALES, Courbevoie (FR)
Appl. No. 17/787,326
Filed by THALES, Courbevoie (FR)
PCT Filed Dec. 18, 2020, PCT No. PCT/EP2020/087289 § 371(c)(1), (2) Date Jun. 19, 2022, PCT Pub. No. WO2021/123359, PCT Pub. Date Jun. 24, 2021.
Claims priority of application No. 1914860 (FR), filed on Dec. 19, 2019.
Prior Publication US 2023/0019436 A1, Jan. 19, 2023
Int. Cl. H10N 30/50 (2023.01); B81B 3/00 (2006.01); G01S 7/481 (2006.01); G01S 17/42 (2006.01); G02B 26/08 (2006.01); G02B 26/10 (2006.01); H10N 30/85 (2023.01); H01L 31/0232 (2014.01); H01S 5/00 (2006.01)

CPC H10N 30/50 (2023.02) [B81B 3/0027 (2013.01); G01S 7/4813 (2013.01); G01S 7/4817 (2013.01); G01S 17/42 (2013.01); G02B 26/0833 (2013.01); G02B 26/105 (2013.01); H10N 30/852 (2023.02); B81B 2203/051 (2013.01); H01L 31/02325 (2013.01); H01S 5/0071 (2013.01)]

11 Claims

1. An optoelectronic component comprising an optical transducer made of III-V semiconductor material and an optical scanning microelectromechanical system comprising a mirror and holding springs, the optical transducer and the optical scanning microelectromechanical system being produced in a wafer comprising, in this order, a layer of III-V semiconductor material, a first layer made of silicon or silicon nitride with a thickness of less than one micron and wherein at least the mirror and its holding springs are produced, a second layer made of silicon oxide, the optoelectronic component comprising an optical guide contained within the first layer made of silicon or silicon nitride and the second layer made of silicon oxide.