US 12,219,857 B2
Display apparatus, display module, and electronic device
Kazunori Watanabe, Tokyo (JP); Koji Kusunoki, Kanagawa (JP); Susumu Kawashima, Kanagawa (JP); Taisuke Kamada, Saitama (JP); Ryo Hatsumi, Kanagawa (JP); and Daisuke Kubota, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/623,798
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Jun. 23, 2020, PCT No. PCT/IB2020/055891
§ 371(c)(1), (2) Date Dec. 29, 2021,
PCT Pub. No. WO2021/005434, PCT Pub. Date Jan. 14, 2021.
Claims priority of application No. 2019-126333 (JP), filed on Jul. 5, 2019.
Prior Publication US 2022/0246694 A1, Aug. 4, 2022
Int. Cl. H10K 59/65 (2023.01); G06F 3/042 (2006.01); H10K 30/40 (2023.01); H10K 30/82 (2023.01); H10K 39/30 (2023.01); H10K 50/828 (2023.01); H10K 50/86 (2023.01); H10K 59/122 (2023.01); H10K 59/38 (2023.01); H10K 59/40 (2023.01); G06F 3/041 (2006.01); H10K 102/00 (2023.01)
CPC H10K 59/65 (2023.02) [H10K 30/82 (2023.02); H10K 50/828 (2023.02); H10K 50/865 (2023.02); H10K 59/40 (2023.02); G06F 3/0412 (2013.01); G06F 3/0421 (2013.01); H10K 30/40 (2023.02); H10K 59/122 (2023.02); H10K 59/38 (2023.02); H10K 2102/311 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A display apparatus comprising a first pixel circuit, a second pixel circuit, a resin layer, a light-blocking layer, and a substrate,
wherein the first pixel circuit comprises a light-receiving device, a first transistor, and a second transistor,
wherein the second pixel circuit comprises a light-emitting device,
wherein the light-receiving device comprises a first pixel electrode, an active layer, and a common electrode,
wherein the light-emitting device comprises a second pixel electrode, a light-emitting layer, and the common electrode,
wherein the active layer is positioned over the first pixel electrode,
wherein the active layer comprises a first organic compound,
wherein the light-emitting layer is positioned over the second pixel electrode,
wherein the light-emitting layer comprises a second organic compound different from the first organic compound,
wherein the common electrode comprises a portion overlapping with the first pixel electrode with the active layer therebetween and a portion overlapping with the second pixel electrode with the light-emitting layer therebetween,
wherein the first transistor comprises polysilicon as a semiconductor layer,
wherein the second transistor comprises a metal oxide as a semiconductor layer,
wherein each of the resin layer and the light-blocking layer is positioned between the common electrode and the substrate,
wherein the resin layer comprises an opening overlapping with the light-receiving device,
wherein the resin layer comprises a portion overlapping with the light-emitting device, and
wherein the light-blocking layer comprises a portion positioned between the common electrode and the resin layer.