| CPC H10K 59/18 (2023.02) [H01L 27/156 (2013.01); H01L 33/0095 (2013.01); H01L 33/36 (2013.01); H01L 33/62 (2013.01); H10K 59/35 (2023.02); H10K 59/353 (2023.02)] | 12 Claims |

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1. A method of integrating microdevices comprising:
providing a first microdevice on a first donor substrate;
providing a second microdevice on a second donor substrate;
integrating the first microdevice from the first donor substrate to a first landing area on a system substrate;
after the integrating the first microdevice, and prior to providing one or more planarization layers around or over the first microdevice, forming one or more stages on a second landing area on the system substrate, wherein a height of the one or more stages is the same or higher than a height of the first microdevice; and
integrating the second microdevice from the second donor substrate to the one or more stages on the second landing area on the system substrate, wherein a top of the second microdevice is higher than a top of the first microdevice.
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