US 12,219,837 B2
Display panel having an extension wiring connected to a cathode layer and method for fabricating same
Qiankun Xu, Shenzhen (CN); and Xingyu Zhou, Shenzhen (CN)
Assigned to Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
Appl. No. 17/610,509
Filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen (CN)
PCT Filed Sep. 29, 2021, PCT No. PCT/CN2021/121598
§ 371(c)(1), (2) Date Nov. 11, 2021,
PCT Pub. No. WO2023/039953, PCT Pub. Date Mar. 23, 2023.
Claims priority of application No. 202111094996.3 (CN), filed on Sep. 17, 2021.
Prior Publication US 2024/0237448 A1, Jul. 11, 2024
Int. Cl. H10K 59/131 (2023.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/122 (2023.01); H10K 59/124 (2023.01)
CPC H10K 59/1315 (2023.02) [H10K 59/1201 (2023.02); H10K 59/1213 (2023.02); H10K 59/122 (2023.02); H10K 59/124 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A display panel, comprising:
A display panel, comprising a light-emitting area and a cathode overlapping area, and further comprising:
a first metal layer comprising a first wire located in the cathode overlapping area;
a second metal layer disposed above the first metal layer and comprising a second wire located in the cathode overlapping area;
a third metal layer disposed above the second metal layer and comprising an extension wire located in the cathode overlapping area; and
a light-emitting device disposed above the second metal layer, located in the light-emitting area, and comprising an anode layer, an organic functional layer, and a cathode layer in sequence, wherein the cathode layer extends from the light-emitting area to the cathode overlapping area and is connected to the extension wire;
the display panel further comprising a bonding area, wherein the cathode overlapping area is located between the light-emitting area and the bonding area, the first metal layer further comprises a first electrode located in the light-emitting area, the second metal layer further comprises a second electrode, a third electrode, and a third wire, the second electrode and the third electrode are located in the light-emitting area, and the third wire is located in the bonding area; and
the display panel further comprising a glass substrate and a thin film transistor layer disposed on the glass substrate, wherein the thin film transistor layer comprises:
an active layer disposed on the glass substrate and located in the light-emitting area;
an insulating layer comprising a first insulating layer disposed on the active layer and located in the light-emitting area, and a second insulating layer disposed on the glass substrate and located in the cathode overlapping area;
the first metal layer comprising the first electrode disposed on the first insulating layer and located in the light-emitting area, and the first wire disposed on the second insulating layer and located in the cathode overlapping area;
a dielectric layer covering the first electrode, the first wire, and the glass substrate, located in the light-emitting area, the cathode overlapping area, and the bonding area, and provided with a first via hole and a second via hole, wherein the first via hole and the second via hole are located on opposite sides of the first electrode in the light-emitting area and penetrate to a surface of the active layer; and
the second metal layer comprising the second electrode filling the first via hole, extending to a part of a surface of the dielectric layer, and connected to the active layer, the third electrode filling the second via hole, extending to another part of the surface of the dielectric layer, and connected to the active layer, the second wire disposed on the dielectric layer and located in the cathode overlapping area, and the third wire disposed on the dielectric layer and located in the bonding area.