CPC H10K 59/131 (2023.02) [G09G 3/3258 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0842 (2013.01)] | 18 Claims |
1. An array substrate, comprising:
a plurality of gate lines respectively extending along a first direction;
a plurality of data lines respectively extending along a second direction;
a plurality of voltage supply lines respectively extending along the second direction; and
a pixel driving circuit;
wherein the pixel driving circuit comprises a driving transistor; a first transistor; a second transistor; a third transistor, and a storage capacitor; and
the storage capacitor comprises a first capacitor electrode and a second capacitor electrode;
wherein the array substrate comprises:
a semiconductor material layer on a base substrate;
an interference preventing block on the base substrate, the interference preventing block comprising a first arm and a second arm;
a node connecting line in a same layer as a respective one of the plurality of voltage supply lines, connected to the first capacitor electrode through a first via, and connected to the semiconductor material layer through a second via; and
wherein, along the first direction, a portion of the node connecting line at a position connecting to the semiconductor material layer through the second via is spaced apart from a first adjacent data line by the first arm, and is spaced apart from a second adjacent data line by the second arm; and
an orthographic projection of the respective one of the plurality of voltage supply lines on the base substrate substantially covers at least 30% of an orthographic projection of the second arm on the base substrate.
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