US 12,219,836 B2
Array substrate and display apparatus
Maoying Liao, Beijing (CN); Yang Zhou, Beijing (CN); Xin Zhang, Beijing (CN); and Huijuan Yang, Beijing (CN)
Assigned to Chengdu BOE Optoelectronics Technology Co., Ltd., Sichuan (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Filed by Chengdu BOE Optoelectronics Technology Co., Ltd., Sichuan (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Filed on Jan. 9, 2024, as Appl. No. 18/407,506.
Application 18/407,506 is a continuation of application No. 17/428,979, granted, now 11,910,669, previously published as PCT/CN2020/125180, filed on Oct. 30, 2020.
Prior Publication US 2024/0147792 A1, May 2, 2024
Int. Cl. H10K 59/131 (2023.01); G06F 3/041 (2006.01); G09G 3/3258 (2016.01); G09G 3/3266 (2016.01); H01L 27/12 (2006.01); H10K 50/80 (2023.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01)
CPC H10K 59/131 (2023.02) [G09G 3/3258 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0842 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An array substrate, comprising:
a plurality of gate lines respectively extending along a first direction;
a plurality of data lines respectively extending along a second direction;
a plurality of voltage supply lines respectively extending along the second direction; and
a pixel driving circuit;
wherein the pixel driving circuit comprises a driving transistor; a first transistor; a second transistor; a third transistor, and a storage capacitor; and
the storage capacitor comprises a first capacitor electrode and a second capacitor electrode;
wherein the array substrate comprises:
a semiconductor material layer on a base substrate;
an interference preventing block on the base substrate, the interference preventing block comprising a first arm and a second arm;
a node connecting line in a same layer as a respective one of the plurality of voltage supply lines, connected to the first capacitor electrode through a first via, and connected to the semiconductor material layer through a second via; and
wherein, along the first direction, a portion of the node connecting line at a position connecting to the semiconductor material layer through the second via is spaced apart from a first adjacent data line by the first arm, and is spaced apart from a second adjacent data line by the second arm; and
an orthographic projection of the respective one of the plurality of voltage supply lines on the base substrate substantially covers at least 30% of an orthographic projection of the second arm on the base substrate.