| CPC H10B 63/845 (2023.02) [H10N 70/066 (2023.02); H10N 70/231 (2023.02)] | 28 Claims |
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1. A vertical 3D memory device, comprising:
a plurality of contacts extending through a substrate;
a plurality of word line plates separated from one another by respective dielectric layers and including a first plurality of word line plates and a second plurality of word line plates;
a first dielectric material positioned between the first plurality of word line plates and the second plurality of word line plates, the first dielectric material extending in a serpentine shape over the substrate;
a conformal material positioned between the first dielectric material and the first plurality of word line plates and the second plurality of word line plates, respectively, the conformal material extending in a serpentine shape over the substrate in accordance with the first dielectric material;
a plurality of spacers positioned at respective walls of the conformal material and within a plurality of openings along sidewalls of the first plurality of word line plates and the second plurality of word line plates and in accordance with the serpentine shape of the conformal material, each opening including a plurality of the plurality of spacers;
a plurality of pillars formed over and coupled with the plurality of contacts; and
a plurality of storage elements each comprising chalcogenide material positioned in a recess formed by a respective word line plate, a respective pillar, respective two spacers, and respective two dielectric layers.
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