US 12,219,783 B2
Semiconductor devices and hybrid transistors
Kamal M. Karda, Boise, ID (US); Haitao Liu, Boise, ID (US); and Durai Vishak Nirmal Ramaswamy, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 27, 2023, as Appl. No. 18/519,964.
Application 18/519,964 is a division of application No. 17/182,953, filed on Feb. 23, 2021, granted, now 11,856,799.
Application 17/182,953 is a division of application No. 16/118,110, filed on Aug. 30, 2018, granted, now 10,943,953, issued on Mar. 9, 2021.
Claims priority of provisional application 62/552,824, filed on Aug. 31, 2017.
Prior Publication US 2024/0099026 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/49 (2006.01); G11C 5/12 (2006.01); G11C 13/00 (2006.01); H01L 21/8234 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01); G11C 11/401 (2006.01)
CPC H10B 63/84 (2023.02) [G11C 5/12 (2013.01); G11C 13/0002 (2013.01); H01L 21/823487 (2013.01); H01L 27/1225 (2013.01); H01L 29/4908 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/7827 (2013.01); H01L 29/78642 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H10B 63/22 (2023.02); H10B 63/24 (2023.02); H10B 63/34 (2023.02); H10N 70/011 (2023.02); H10N 70/245 (2023.02); H10N 70/828 (2023.02); H10N 70/841 (2023.02); H10N 70/883 (2023.02); G11C 11/1659 (2013.01); G11C 11/2259 (2013.01); G11C 11/401 (2013.01); G11C 13/003 (2013.01); G11C 2213/79 (2013.01); H01L 29/78618 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a hybrid transistor configured in a vertical orientation and including:
a gate electrode;
a drain material;
a source material; and
a channel material operatively coupled between the drain material and the source material, wherein the source material and the drain material include a first material and the channel material includes a second, different material, wherein the channel material has a length that is less than a length of the gate electrode.