US 12,219,764 B2
Non-volatile memory device and method of manufacturing the non-volatile memory device
In Su Park, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jul. 8, 2022, as Appl. No. 17/860,516.
Application 17/860,516 is a continuation of application No. 16/830,070, filed on Mar. 25, 2020, granted, now 11,387,252.
Claims priority of application No. 10-2019-0124650 (KR), filed on Oct. 8, 2019.
Prior Publication US 2022/0344369 A1, Oct. 27, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 43/27 (2023.01); G11C 16/04 (2006.01)
CPC H10B 43/27 (2023.02) [G11C 16/0483 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method of manufacturing a non-volatile memory device, the method comprising:
forming a stack structure on the semiconductor substrate with a source line region;
forming a slit through the stack structure;
forming a sealing layer on an inner wall of the slit;
forming a source liner including a conductive layer on a surface of the sealing layer and a bottom surface of the slit to contact the source line region with the source liner;
forming a gap-filling layer including an insulating material in the slit; and
forming a source contact pattern on the gap-filing layer in the slit.