US 12,219,760 B2
Semiconductor chip and semiconductor device including the same
Kangmin Kim, Hwaseong-si (KR); Seungmin Song, Hwaseong-si (KR); Dongseog Eun, Seongnam-si (KR); and Seokhwa Jung, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 4, 2021, as Appl. No. 17/338,823.
Claims priority of application No. 10-2020-0135181 (KR), filed on Oct. 19, 2020.
Prior Publication US 2022/0123014 A1, Apr. 21, 2022
Int. Cl. H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/40 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor chip, comprising:
a substrate;
a source structure disposed on the substrate;
a support pattern disposed on the source structure,
wherein each of the source structure and the support pattern comprises polysilicon;
an electrode structure disposed on the support pattern; and
a plurality of vertical structures extending vertically through the electrode structure,
wherein the electrode structure comprises:
a lower electrode structure disposed on the support pattern and comprising a plurality of lower gate electrodes and a plurality of first insulating films;
a second insulating film disposed on the lower electrode structure; and
an upper electrode structure disposed on the second insulating film and comprising a plurality of upper gate electrodes and a plurality of third insulating films,
wherein the vertical structures contact an upper surface of the source structure above the source structure.