US 12,219,759 B2
Semiconductor device and method of manufacturing semiconductor device
Ki Hong Lee, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Mar. 29, 2021, as Appl. No. 17/215,639.
Claims priority of application No. 10-2020-0125709 (KR), filed on Sep. 28, 2020.
Prior Publication US 2022/0102373 A1, Mar. 31, 2022
Int. Cl. H10B 41/27 (2023.01); H10B 41/10 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming a stacked structure including alternately stacked first material layers and second material layers;
forming a first opening including a through hole passing through the stacked structure and a notch coupled to the through hole and located in at least one of interfaces of the first material layers and second material layers;
forming a sacrificial layer including a first part contacting an inner surface of the through hole and a second part protruding from the first part into the notch; and
oxidizing the first part of the sacrificial layer and thereby forming a first sacrificial pattern contacting the inner surface of the through hole and a plugging pattern filling the notch.