US 12,219,753 B2
Method for fabricating a semiconductor device having a single crystal storage contact
Jin Won Ma, Hwaseong-si (KR); Ja Min Koo, Hwaseong-si (KR); Dae Young Moon, Seoul (KR); Kyu Wan Kim, Suwon-si (KR); Bong Hyun Kim, Incheon (KR); and Young Seok Kim, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 13, 2023, as Appl. No. 18/538,358.
Application 18/538,358 is a continuation of application No. 17/355,451, filed on Jun. 23, 2021, granted, now 11,877,443.
Claims priority of application No. 10-2020-0094161 (KR), filed on Jul. 29, 2020.
Prior Publication US 2024/0114679 A1, Apr. 4, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/485 (2023.02) [H10B 12/37 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, the method comprising:
forming a bit line structure on a substrate, the substrate including an element separation film;
forming a trench in the element separation film and in the substrate on at least one side of the bit line structure, the trench including a first portion in the element separation film and a second portion in the substrate, a bottom face of the first portion above a bottom face of the second portion;
forming a storage contact in the trench;
irradiating the storage contact with a laser to recrystallize the storage contact; and
forming a landing pad on the storage contact, wherein
the storage contact is a single crystal storage contact.