US 12,219,751 B2
Semiconductor memory device and method for forming the same
Min-Teng Chen, Quanzhou (CN)
Assigned to Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on Feb. 17, 2022, as Appl. No. 17/673,826.
Claims priority of application No. 202111051859.1 (CN), filed on Sep. 8, 2021; and application No. 202122168950.3 (CN), filed on Sep. 8, 2021.
Prior Publication US 2023/0073903 A1, Mar. 9, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/315 (2023.02) [H10B 12/033 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A semiconductor memory device, comprising:
a substrate; and
a capacitor, disposed on the substrate, and comprising:
a bottom electrode layer, a capacitor dielectric layer and a top electrode layer sequentially stacked from bottom to top; and
an aluminum-containing insulation layer, comprising aluminum titanium nitride or aluminum oxynitride, wherein the aluminum-containing insulation layer is in direct contact with the capacitor dielectric layer and is disposed between the bottom electrode layer and the top electrode layer, wherein the aluminum-containing insulation layer comprises a plurality of arc-shaped protrusions separated from each other, and exhibits a discontinuous film structure, and the arc-shaped protrusions respectively have first thickness and a second thicknesses different from the first thickness.