US 12,219,746 B2
Semiconductor structure and method for forming the same
Chun-Hung Chen, Hsinchu (TW); and Jhon-Jhy Liaw, Zhudong Township, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 27, 2022, as Appl. No. 17/826,225.
Prior Publication US 2023/0389252 A1, Nov. 30, 2023
Int. Cl. H10B 10/00 (2023.01)
CPC H10B 10/12 (2023.02) 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
forming a first semiconductor material over a substrate;
forming a first trench and a second trench in the first semiconductor material, wherein the first trench is deeper than the second trench;
forming a second semiconductor material in the first trench and the second trench;
patterning a first portion of the second semiconductor material in the first trench and a first portion of the first semiconductor material below the first portion of the second semiconductor material into a first fin structure,
patterning a second portion of the second semiconductor material in the second trench and a second portion of the first semiconductor material below the second portion of the second semiconductor material into a second fin structure; and
forming an isolation structure over the substrate to surround the first fin structure and the second fin structure.