US 12,219,320 B2
MEMS device with enhanced membrane structure and method of forming the same
Chun-Wen Cheng, Hsinchu County (TW); Chun Yin Tsai, Hsinchu (TW); and Chia-Hua Chu, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 21, 2023, as Appl. No. 18/356,246.
Application 18/356,246 is a continuation of application No. 17/815,249, filed on Jul. 27, 2022, granted, now 11,750,980.
Application 17/815,249 is a continuation of application No. 16/904,560, filed on Jun. 18, 2020, granted, now 11,418,887, issued on Aug. 16, 2022.
Claims priority of provisional application 62/893,087, filed on Aug. 28, 2019.
Prior Publication US 2023/0370783 A1, Nov. 16, 2023
Int. Cl. H04R 17/02 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01)
CPC H04R 17/02 (2013.01) [B81B 3/0021 (2013.01); B81C 1/00158 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/04 (2013.01); H04R 2201/003 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate; and
a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape comprising vertices,
wherein the membrane comprises a via pattern including:
first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region; and
second lines extending from the anchored region of the membrane toward the central region of the membrane, each of the first lines or each of the second lines comprising non-straight lines.